Evidence for the presence of U-Mo-Al ternary compounds in the UMo/Al interaction layer grown by thermal annealing: a coupled µ-XRD/µ-XAS study - Université de Rennes Accéder directement au contenu
Article Dans Une Revue Journal of Applied Crystallography Année : 2007

Evidence for the presence of U-Mo-Al ternary compounds in the UMo/Al interaction layer grown by thermal annealing: a coupled µ-XRD/µ-XAS study

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Matériaux

Dates et versions

hal-00419223 , version 1 (23-09-2009)

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Citer

H. Palancher, P. Martin, V. Nassif, R. Tucoulou, O. Proux, et al.. Evidence for the presence of U-Mo-Al ternary compounds in the UMo/Al interaction layer grown by thermal annealing: a coupled µ-XRD/µ-XAS study. Journal of Applied Crystallography, 2007, 40 (6), pp.1064-1075. ⟨10.1107/S0021889807040010⟩. ⟨hal-00419223⟩
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