Photosensitive post tuning of chalcogenide Te20As30Se50 narrow bandpass filters - Université de Rennes Accéder directement au contenu
Article Dans Une Revue Optics Communications Année : 2008

Photosensitive post tuning of chalcogenide Te20As30Se50 narrow bandpass filters

Weidong Shen
  • Fonction : Auteur correspondant
  • PersonId : 945668

Connectez-vous pour contacter l'auteur
Michel Cathelinaud
Michel Lequime
  • Fonction : Auteur
  • PersonId : 832181
Xu Liu

Résumé

We present an experimental study on the photosensitive properties of narrow bandpass filters based on a chalcogenide Te20As30Se50 (TAS) spacer. The transmittance curve of single TAS layer was shifted towards long wavelength direction after 2 h exposure by Xenon arc lamp. The refractive index and extinction coefficient were both increased together with a red shift of optical gap. A maximum 1.7% photo-induced effect was observed. Narrow band filters constituted by TAS and cryolite were manufactured by electron beam deposition. The transmittance spectrum of the filter during the exposure by a wide band source was in situ measured and the resonant wavelength was observed to turn longer gradually till saturation. A spatially localized central wavelength change up to 5.7 nm was finally obtained. The stability of the photo-induced effect was studied and some comments were given at the end of this paper.

Domaines

Matériaux

Dates et versions

hal-00402024 , version 1 (06-07-2009)

Identifiants

Citer

Weidong Shen, Michel Cathelinaud, Michel Lequime, Virginie Nazabal, Xu Liu. Photosensitive post tuning of chalcogenide Te20As30Se50 narrow bandpass filters. Optics Communications, 2008, 281 (14), pp.3726-3731. ⟨10.1016/j.optcom.2008.03.041⟩. ⟨hal-00402024⟩
71 Consultations
0 Téléchargements

Altmetric

Partager

Gmail Facebook X LinkedIn More