Epitaxial growth and ferroelectric properties of (115) SrBi2Nb2O9 thin films deposited by pulsed laser deposition on epitaxial (111) Pt electrode
Résumé
Epitaxial SrBi2Nb2O9 thin films have been grown by pulsed-laser deposition on Pt(111) bottom electrode epitaxially grown by dc sputtering on sapphire(0001). Four-circle x-ray diffraction reveals the epitaxial growth of the SrBi2Nb2O9(115)/Pt(111) bilayers. The influence of the Pt bottom electrode on the growth of SrBi2Nb2O9 films is discussed in terms of atomic matching at the SrBi2Nb2O9/Pt interface. The remanent polarization is close to 6 μC/cm2, with a coercive field of 140 kV/cm. The zero-field relative permittivity is about 132 and the dielectric loss less than to 2%. The decay in remanent polarization is only 16% after 2.109 switching cycles, confirming the fatigue resistance of the film.